Skip to comments.Imec and GLOBALFOUNDRIES collaborate to advance high-density memory technology
Posted on 05/25/2013 11:28:54 AM PDT by Ernest_at_the_Beach
Imec and GLOBALFOUNDRIES announced today that they have expanded joint development efforts to advance STT-MRAM (spin-transfer torque magnetoresistive random access memory) technology.
The first IC manufacturer to join imecs R&D program on emerging memory technologies, GLOBALFOUNDRIES completes the value chain of imecs research platform, which fuels industry collaboration from technology up to the system level. GLOBALFOUNDRIES is joining a team with a leading fabless company and several worldwide equipment suppliers providing the complete infrastructure necessary for R&D on STT-MRAM.
STT-MRAM technology is a promising high-density alternative to existing memory technologies, like SRAM and DRAM. Together, imec and the program members aim to explore the potential of STT-MRAM, including performance below 1ns and scalability beyond 10nm for embedded and standalone applications.
We are elated to intensify our collaboration with GLOBALFOUNDRIES and the other program members on advanced memory technologiesits a true testament to the value we offer our industrial partners, stated Luc Van den hove, president and CEO at imec. Our unique research environment harnesses the collective expertise and knowledge of the entire value chain, bringing together foundries, IDMs, fabless and fablite companies, packaging and assembly companies, and equipment and material suppliers to drive innovation and the development of new, competitive products.
Innovation in next-generation memory is required to give chip designers new options to continue to deliver leading-edge products with higher performance, lower power-consumption, and better bandwidth, said GLOBALFOUNDRIES chief technology officer Gregg Bartlett. This new partnership with imec will enable close collaboration with customers, partners, and the supplier community to help reduce the risk in bringing this new memory technology to market.
(Excerpt) Read more at electroiq.com ...
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases in density of existing memory technologies notably flash RAM and DRAM kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become dominant for all types of memory, becoming a universal memory.
EETimes only allows links.
Maybe set top boxes for TVs will be integrated into the TV or a box attached to them.
Perhaps this technology will pan out in a big way.
Like being able to store the data on every citizen on solid state server farms available only to government employees and those they want to bribe ?
Disclaimer: Opinions posted on Free Republic are those of the individual posters and do not necessarily represent the opinion of Free Republic or its management. All materials posted herein are protected by copyright law and the exemption for fair use of copyrighted works.